Investigation of mechanisms and influencing processing factors on mobility enhancement in strained Si n-MOSFETs
Name
54863743-MIT.pdf
Description
Full printable version
Size
6.94 MB
Format
Adobe PDF
Checksum (MD5)
6cb6b2e73d6cb391d0db63453ebb53b5
Author(s)
Xia, Guangrui, 1976-
Advisor(s)
Judy L. Hoyt.
Date Issued
2003
Publisher
Massachusetts Institute of Technology
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2003.
Includes bibliographical references (p. 92-95).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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