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  4. Large-scale 2D electronics based on single-layer MoS[subscript 2] grown by chemical vapor deposition

Large-scale 2D electronics based on single-layer MoS[subscript 2] grown by chemical vapor deposition

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Author(s)
Wang, H.
•
Yu, L.
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Lee, Y.-H.
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Fang, W.
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Hsu, Allen Long
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Chin, M.
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Dubey, Madan
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Li, L.-J.
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Kong, Jing
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Herring, Patrick Kenichi
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Date Issued
December 2012
Journal
Proceedings of the 2012 International Electron Devices Meeting (IEDM)
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Wang, H., L. Yu, Y.-H. Lee, W. Fang, A. Hsu, P. Herring, M. Chin, et al. “Large-Scale 2D Electronics Based on Single-Layer MoS2 Grown by Chemical Vapor Deposition.” 2012 International Electron Devices Meeting (n.d.).
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Author's final manuscript
Abstract
2D nanoelectronics based on single-layer MoS[subscript 2] offers great advantages for both conventional and ubiquitous applications. This paper discusses the large-scale CVD growth of single-layer MoS[subscript 2] and fabrication of integrated devices and circuits for the first time. Fundamental building blocks of digital electronics, such as inverters and NAND gates, are fabricated to demonstrate its capability for logic applications.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Physics
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
http://creativecommons.org/licenses/by-nc-sa/4.0/
Persistent DSpace Link
http://hdl.handle.net/1721.1/87106
DOI of Published Version
https://doi.org/10.1109/IEDM.2012.6478980
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