Spintronics using low magnetization materials
Name
1227518462-MIT.pdf
Size
10.6 MB
Format
Adobe PDF
Checksum (MD5)
30a50b3de734e7918644705c7c1a8f97
Author(s)
Finley, Joseph T.(Joseph Tyler)
Advisor(s)
Luqiao Liu and Marc Baldo.
Date Issued
2020
Publisher
Massachusetts Institute of Technology
Abstract
Information storage using magnetic materials is accomplished by controlling and sensing the magnetic moment orientation of nanoscale ferromagnets. In order to improve performance and compete with existing and alternative emerging memory technologies, further improvements in device switching speeds, density, and energy efficiency are needed. To address these issues, we explore the use of low magnetization ferrimagnetic and antiferromagnetic materials as information storage mediums. We demonstrate the feasibility of spin-torque switching in compensated ferrimagnetic systems, along with increased switching speeds. We also show the existence of resistive artifacts in current-induced antiferromagnetic switching, which need to be removed if practical devices are to be realized. Finally we achieve spin wave transmission in ferrimagnetic insulators with perpendicular magnetization, which is a promising step forward for the development of spin wave computing devices. Magnetic devices using small moment magnets promise a spintronic platform for fast, dense, and energy efficient memory technology.
Description
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, September, 2020
Cataloged from student-submitted PDF of thesis.
Includes bibliographical references.
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
MIT theses may be protected by copyright. Please reuse MIT thesis content according to the MIT Libraries Permissions Policy, which is available through the URL provided.
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