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  5. Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors

Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors

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Author(s)
del Alamo, Jesús A.
•
Bahl, Sandeep R.
•
Moolji, Akbar A.
•
Cudjoe-Flanders, Charmaine A.
•
Odoardi, Angela R.
Date Issued
1993-01-01 to 1993-12-31
Publisher
Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
Series/Report no.
Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 136
Description
Contains an introduction, reports on two research projects and a list of publications and conference papers.
Terms of Use
Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.
Persistent DSpace Link
http://hdl.handle.net/1721.1/57250
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