Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors
Name
RLE_PR_136_01_01s_02.pdf
Size
537.75 KB
Format
Adobe PDF
Checksum (MD5)
c19723ccfe13a1c8be8716e6db841f44
Author(s) • • • •
del Alamo, Jesús A.
Bahl, Sandeep R.
Moolji, Akbar A.
Cudjoe-Flanders, Charmaine A.
Odoardi, Angela R.
Date Issued
1993-01-01 to 1993-12-31
Publisher
Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
Series/Report no.
Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 136
Description
Contains an introduction, reports on two research projects and a list of publications and conference papers.
Terms of Use
Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.
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