Thermionic Emission and Negative dI/dV in Photoactive Graphene Heterostructures
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Author(s) • •
Rodriguez Nieva, Joaquin Francisco
Dresselhaus, Mildred
Levitov, Leonid
Date Issued
January 2015
Journal
Nano Letters
Publisher
American Chemical Society (ACS)
Citation
Rodriguez-Nieva, Joaquin F., Mildred S. Dresselhaus, and Leonid S. Levitov. “Thermionic Emission and Negative D I /D V in Photoactive Graphene Heterostructures.” Nano Letters 15.3 (2015): 1451–1456.
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Author's final manuscript
Abstract
Transport in photoactive graphene heterostructures, originating from the dynamics of photogenerated hot carriers, is governed by the processes of thermionic emission, electron–lattice thermal imbalance, and cooling. These processes give rise to interesting photoresponse effects, in particular negative differential resistance (NDR) arising in the hot-carrier regime. The NDR effect stems from a strong dependence of electron–lattice cooling on the carrier density, which results in the carrier temperature dropping precipitously upon increasing bias. The ON–OFF switching between the NDR regime and the conventional cold emission regime, as well as the gate-controlled closed-circuit current that is present at zero bias voltage, can serve as signatures of hot-carrier dominated transport.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Physics
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DOI of Published Version
https://doi.org/10.1021/nl502522q