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Reduction of in-plane field required for spin-orbit torque magnetization reversal by insertion of Au spacer in Pt/Au/Co/Ni/Co/Ta
Name
1.4991950.pdf
Description
Published version
Size
3.11 MB
Format
Adobe PDF
Checksum (MD5)
bd8a8595ada7f13b94ba7a2404c05127
Author(s)
Mann, M
Beach, GSD
Date Issued
2017
Journal
APL Materials
Publisher
AIP Publishing
Version
Final published version
Abstract
© 2017 Author(s). Spin-orbit torques and current-induced switching are studied in perpendicularly magnetized Pt/Au/(Co/Ni/Co) films as a function of Au insertion layer thickness tAu. By simultaneously varying the ferromagnet layer thickness, a parametric series of samples with nearly constant anisotropy were prepared. On this series, spin orbit torques were characterized by harmonic voltage and hysteresis loop shift measurements, and current-induced switching was examined as a function of the in-plane bias field. Little variation is seen for tAu < 0.5 nm, whereas for tAu > 0.5 nm, a series of well-correlated effects appear. Both the loop shift efficiency and the Slonczewski-like spin-orbit torque effective field double, while the in-plane field required to saturate the loop shift efficiency decreases by a factor of ∼10. Correspondingly, the current and in-plane field required for spin-orbit torque switching are reduced by about 90%. These results suggest that a thin Au insertion layer reduces the Dzyaloshinskii-Moriya interaction strength and improves spin transmission at the spin Hall metal/ferromagnet interface, substantially reducing the in-plane field and currents for spin orbit torque switching.
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Creative Commons Attribution 4.0 International license
Persistent DSpace Link
DOI of Published Version
10.1063/1.4991950
