Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes
Name
kimerling_room-temperature.pdf
Size
1.68 MB
Format
Adobe PDF
Checksum (MD5)
9d768c646d5dc6954287198189ef8fb5
Author(s)
Sun, Xiaochen
Liu, Jifeng
Michel, Jurgen
Kimerling, Lionel C
Date Issued
April 2009
Journal
Optics Letters
Publisher
Optical Society of America
Citation
Xiaochen Sun, Jifeng Liu, Lionel C. Kimerling, and Jurgen Michel, "Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes," Opt. Lett. 34, 1198-1200 (2009) http://www.opticsinfobase.org/abstract.cfm?URI=ol-34-8-1198
Version
Author's final manuscript
Abstract
We report what we believe to be the first demonstration of direct bandgap electroluminescence (EL) from Ge/Si heterojunction light-emitting diodes (LEDs) at room temperature. In-plane biaxial tensile strain is used to engineer the band structure of Ge to enhance the direct gap luminescence efficiency by increasing the injected electron population in the direct Γ valley. Room-temperature EL is observed at the direct gap energy from a Ge/Si p-i-n diode exhibiting the same characteristics of the direct gap photoluminescence of Ge. The integral direct gap EL intensity increases superlinearly with electrical current owing to an indirect valley filling effect. These results indicate a promising future of tensile-strained Ge-on-Si for electrically pumped, monolithically integrated light emitters on Si.
Subjects
Integrated Optics
MIT Department
Massachusetts Institute of Technology. Materials Processing Center
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Microphotonics Center
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1364/OL.34.001198
