Magnetization-governed magnetoresistance anisotropy in the topological semimetal CeBi
Name
PhysRevB.100.180407.pdf
Description
Published version
Size
827.92 KB
Format
Adobe PDF
Checksum (MD5)
2475e61d638d49b9087b90783e825f5d
Author(s)
Lyu, Yang-Yang
Han, Fei
Xiao, Zhi-Li
Xu, Jing
Wang, Yong-Lei
Wang, Hua-Bing
Bao, Jin-Ke
Chung, Duck Young
Li, Mingda
Martin, Ivar
Date Issued
2019
Journal
Physical Review B
Publisher
American Physical Society (APS)
Version
Final published version
Abstract
© 2019 American Physical Society. Magnetic topological semimetals, the latest member of topological quantum materials, are attracting extensive attention as they may lead to topologically driven spintronics. Currently, magnetotransport investigations on these materials are focused on the anomalous Hall effect. Here, we report on the magnetoresistance anisotropy of topological semimetal CeBi, which has tunable magnetic structures arising from localized Ce 4f electrons and exhibits both negative and positive magnetoresistances, depending on the temperature. We found that the angle dependence of the negative magnetoresistance, regardless of its large variation with the magnitude of the magnetic field and with temperature, is solely dictated by the field-induced magnetization that is orientated along a primary crystalline axis and flops under the influence of a rotating magnetic field. The results reveal the strong interaction between conduction electrons and magnetization in CeBi. They also indicate that magnetoresistance anisotropy can be used to uncover the magnetic behavior and the correlation between transport phenomena and magnetism in magnetic topological semimetals.
MIT Department
Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1103/PHYSREVB.100.180407
