High Luminescence Efficiency in MoS
Name
Kong_High luminescence.pdf
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3.09 MB
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Author(s)
Amani, Matin
Burke, Robert A.
Ji, Xiang
Zhao, Peida
Lien, Der-Hsien
Taheri, Peyman
Ahn, Geun Ho
Kirya, Daisuke
Ager, Joel W.
Yablonovitch, Eli
Date Issued
June 2016
Journal
ACS Nano
Publisher
American Chemical Society (ACS)
Citation
Amani, Matin et al. “High Luminescence Efficiency in MoS2Grown by Chemical Vapor Deposition.” ACS Nano 10, 7 (July 2016): 6535–6541 © 2016 American Chemical Society
Version
Author's final manuscript
Abstract
One of the major challenges facing the rapidly growing field of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is the development of growth techniques to enable large-area synthesis of high-quality materials. Chemical vapor deposition (CVD) is one of the leading techniques for the synthesis of TMDCs; however, the quality of the material produced is limited by defects formed during the growth process. A very useful nondestructive technique that can be utilized to probe defects in semiconductors is the room-temperature photoluminescence (PL) quantum yield (QY). It was recently demonstrated that a PL QY near 100% can be obtained in MoS₂ and WS₂ monolayers prepared by micromechanical exfoliation by treating samples with an organic superacid: bis(trifluoromethane)sulfonimide (TFSI). Here we have performed a thorough exploration of this chemical treatment on CVD-grown MoS₂ samples. We find that the as-grown monolayers must be transferred to a secondary substrate, which releases strain, to obtain high QY by TFSI treatment. Furthermore, we find that the sulfur precursor temperature during synthesis of the MoS₂ plays a critical role in the effectiveness of the treatment. By satisfying the aforementioned conditions we show that the PL QY of CVD-grown monolayers can be improved from ∼0.1% in the as-grown case to ∼30% after treatment, with enhancement factors ranging from 100 to 1500× depending on the initial monolayer quality. We also found that after TFSI treatment the PL emission from MoS₂ films was visible by eye despite the low absorption (5–10%). The discovery of an effective passivation strategy will speed the development of scalable high-performance optoelectronic and electronic devices based on MoS₂.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Research Laboratory of Electronics
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DOI of Published Version
https://doi.org/10.1021/acsnano.6b03443
