Temperature Dependent Characteristics of InAlN/GaN HEMTs for mm-Wave Applications
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Palacios_Temperature dependent.pdf
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344.38 KB
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Author(s)
Xing, Weichuan
Liu, Zhihong
Ng, Geok Ing
Palacios, Tomas
Date Issued
March 2016
Journal
Procedia Engineering
Publisher
Elsevier
Citation
Xing, Weichuan et al. “Temperature Dependent Characteristics of InAlN/GaN HEMTs for Mm-Wave Applications.” Procedia Engineering 141 (2016): 103–107 © 2016 The Authors
Version
Final published version
Abstract
This work presents a 100 nm-gate InAlN/GaN HEMT with current-gain cutoff frequency (f[subscript T]) up to 120 GHz at room temperature (25 °C). Temperature dependent DC and RF characteristics are measured from 25 °C to 200 °C. The maximum drain current (I[subscript d−max]) decreases from 1247 mA/mm to 927 mA/mm as the temperature increases from 25 °C to 200 °C. For maximum f[subscript T], it drops to 87 GHz and 64 GHz at 100°C and 200°C respectively. These results show that although both DC and RF performances decrease with the increase in temperature, the device still exhibits high mm-wave performance at high temperatures. Thus, InAlN/GaN based HEMTs are very promising for high temperature mm-wave applications.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Creative Commons Attribution-NonCommercial-NoDerivs License
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DOI of Published Version
https://doi.org/10.1016/j.proeng.2015.09.222
