Colossal oxygen vacancy formation at a fluorite-bixbyite interface
Name
s41467-020-15153-8.pdf
Description
Published version
Size
1.87 MB
Format
Adobe PDF
Checksum (MD5)
82afd2a3f5bb1f9e008612c6013dad14
Author(s)
Sun, Lixin
Lu, Qiyang
Yildiz, Bilge
Date Issued
March 2020
Journal
Nature Communications
Publisher
Springer Science and Business Media LLC
Citation
Lee, Dongkyu et al. “Colossal oxygen vacancy formation at a fluorite-bixbyite interface.” Nature Communications, 11, 1 (March 2020): 1371 © 2020 The Author(s)
Version
Final published version
Abstract
Oxygen vacancies in complex oxides are indispensable for information and energy technologies. There are several means to create oxygen vacancies in bulk materials. However, the use of ionic interfaces to create oxygen vacancies has not been fully explored. Herein, we report an oxide nanobrush architecture designed to create high-density interfacial oxygen vacancies. An atomically well-defined (111) heterointerface between the fluorite CeO2 and the bixbyite Y2O3 is found to induce a charge modulation between Y3+ and Ce4+ ions enabled by the chemical valence mismatch between the two elements. Local structure and chemical analyses, along with theoretical calculations, suggest that more than 10% of oxygen atoms are spontaneously removed without deteriorating the lattice structure. Our fluorite–bixbyite nanobrush provides an excellent platform for the rational design of interfacial oxide architectures to precisely create, control, and transport oxygen vacancies critical for developing ionotronic and memristive devices for advanced energy and neuromorphic computing technologies.
MIT Department
Massachusetts Institute of Technology. Laboratory for Electrochemical Interfaces
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
Creative Commons Attribution 4.0 International license
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DOI of Published Version
https://doi.org/10.1038/S41467-020-15153-8
