Correlating stress generation and sheet resistance in InAlN/GaN nanoribbon high electron mobility transistors
Name
Gradecak_Correlating stress.pdf
Size
1.45 MB
Format
Adobe PDF
Checksum (MD5)
65991a1b58ac41a482dcfda05beb70a3
Author(s)
Azize, Mohamed
Smith, Matthew J.
Jones, Eric James
Palacios, Tomas
Gradecak, Silvija
Date Issued
September 2012
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Jones, Eric J., Mohamed Azize, Matthew J. Smith, Tomás Palacios, and Silvija Gradečak. “Correlating stress generation and sheet resistance in InAlN/GaN nanoribbon high electron mobility transistors.” Applied Physics Letters 101, no. 11 (2012): 113101. © 2012 American Institute of Physics
Version
Final published version
Abstract
We report the nanoscale characterization of the mechanical stress in InAlN/GaN nanoribbon-structured high electron mobility transistors (HEMTs) through the combined use of convergent beam electron diffraction (CBED) and elastic mechanical modeling. The splitting of higher order Laue zone lines in CBED patterns obtained along the [540] zone axis indicates the existence of a large strain gradient in the c-direction in both the planar and nanoribbon samples. Finite element models were used to confirm these observations and show that a passivating layer of Al[subscript 2]O[subscript 3] can induce a tensile stress in the active HEMT layer whose magnitude is dependent on the oxide layer thickness, thus, providing important ramifications for device design and fabrication.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1063/1.4752160
