Surface State Transport and Ambipolar Electric Field Effect in Bi2Se3 Nanodevices
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Jarillo-Herrero.pdf
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Author(s)
Steinberg, Hadar
Gardner, Dillon Richard
Lee, Young S.
Jarillo-Herrero, Pablo
Date Issued
November 2010
Journal
Nano Letters
Publisher
American Chemical Society
Citation
Steinberg, Hadar et al. “Surface State Transport and Ambipolar Electric Field Effect in Bi2Se3 Nanodevices.” Nano Letters 10.12 (2010): 5032-5036.
Version
Author's final manuscript
Abstract
Electronic transport experiments involving the topologically protected states found at the surface of Bi[subscript 2]Se[subscript 3] and other topological insulators require fine control over carrier density, which is challenging with existing bulk-doped material. Here we report on electronic transport measurements on thin (<100 nm) Bi[subscript 2]Se[subscript 3] devices and show that the density of the surface states can be modulated via the electric field effect by using a top-gate with a high-k dielectric insulator. The conductance dependence on geometry, gate voltage, and temperature all indicate that transport is governed by parallel surface and bulk contributions. Moreover, the conductance dependence on top-gate voltage is ambipolar, consistent with tuning between electrons and hole carriers at the surface.
MIT Department
Massachusetts Institute of Technology. Department of Physics
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Creative Commons Attribution-Noncommercial-Share Alike 3.0
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DOI of Published Version
https://doi.org/10.1021/nl1032183
