Adjoint-Based Sensitivity Analysis for Silicon Photonic Variations
Name
NEMO_2019.pdf
Description
Accepted version
Size
425.36 KB
Format
Adobe PDF
Checksum (MD5)
e071c819a829c4379dd7a97e68f69271
Author(s)
Zhang, Zhengxing
El-Henawy, Sally I.
Sadun, Allan
Miller, Ryan
Daniel, Luca
White, Jacob K.
Boning, Duane S
Date Issued
October 2019
Journal
2019 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Zhengxing, Zhang et al. "Adjoint-Based Sensitivity Analysis for Silicon Photonic Variations." 2019 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization, May 2019, Boston, MA, Institute of Electrical and Electronics Engineers, October 2019. © 2019 IEEE
Version
Author's final manuscript
Abstract
With the rising demand for integrated silicon photonics as a technology platform, it becomes crucial to provide variation-aware models and design for manufacturability (DFM) methods to inform the design of silicon photonic devices and circuits. In this paper, we demonstrate the application of the adjoint method to estimating the sensitivity of photonic components against key process variations inherited from integrated circuit fabrication technologies. In particular, we examine the impact of line edge roughness (LER) on a passive Y-branch, and validate our results with ensemble virtual fabrication simulations. The adjoint sensitivity and variance estimation of Y-branch transmission imbalance is seen to be highly efficient in comparison to direct ensemble simulation.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/nemo.2019.8853679
