Monolithic Ge-on-Si lasers for integrated photonics
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Kimerling_Monolithic ge-on-si.pdf
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Author(s)
Liu, Jifeng
Sun, Xiaochen
Cai, Yan
Kimerling, Lionel C.
Michel, Jurgen
Camacho-Aguilera, Rodolfo Ernesto
Date Issued
September 2010
Journal
Proceedings of the Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Liu, Jifeng, Xiaochen Sun, Rodolfo Camacho-Aguilera, Yan Cai, Lionel C. Kimerling, and Jurgen Michel. “Monolithic Ge-on-Si lasers for integrated photonics.” In 7th IEEE International Conference on Group IV Photonics, 1-3. © Copyright 2010 IEEE
Version
Final published version
Abstract
We report room temperature Ge-on-Si lasers with direct gap emission at 1590-1610 nm. Modeling of Ge/Si double heterojunction structures, which is supported by experimental results of Ge/Si LEDs, indicates the feasibility of electrically pumped lasers.
MIT Department
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/GROUP4.2010.5643446
