Low emissivity high-temperature tantalum thin film coatings for silicon devices
Name
Soljacic_Low emissivity.pdf
Size
1.67 MB
Format
Adobe PDF
Checksum (MD5)
5bc2644c657ce94361d92caae8c38fce
Author(s)
Rinnerbauer, Veronika
Senkevich, Jay
Soljacic, Marin
Joannopoulos, John
Celanovic, Ivan L.
Date Issued
November 2012
Journal
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
Publisher
American Vacuum Society (AVS)
Citation
Rinnerbauer, Veronika et al. “Low Emissivity High-temperature Tantalum Thin Film Coatings for Silicon Devices.” Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31.1 (2013): 011501. © 2013 American Vacuum Society
Version
Final published version
Abstract
The authors study the use of thin ( ∼ 230 nm) tantalum (Ta) layers on silicon (Si) as a low emissivity (high reflectivity) coating for high-temperature Si devices. Such coatings are critical to reduce parasitic radiation loss, which is one of the dominant loss mechanisms at high temperatures (above 700 °C). The key factors to achieve such a coating are low emissivity in the near infrared and superior thermal stability at high operating temperatures. The authors investigated the emissivity of Ta coatings deposited on Si with respect to deposition parameters, and annealing conditions, and temperature. The authors found that after annealing at temperatures ≥ 900 °C the emissivity in the near infrared (1−3 μm) was reduced by a factor of 2 as compared to bare Si. In addition, the authors measured thermal emission at temperatures from 700 to 1000 °C, which is stable up to a heater temperature equal to the annealing temperature. Furthermore, Auger electron spectroscopy profiles of the coatings before and after annealing were taken to evaluate thermal stability. A thin (about 70 nm) Ta[subscript 2]O[subscript 5] layer was found to act as an efficient diffusion barrier between the Si substrate and the Ta layer to prevent Si diffusion.
MIT Department
Massachusetts Institute of Technology. Institute for Soldier Nanotechnologies
Massachusetts Institute of Technology. Department of Physics
Massachusetts Institute of Technology. Research Laboratory of Electronics
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1116/1.4766295
