Limiting role of dislocations in high-current AlGaN/GaN hot electron transistors
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063505_1_5.0193571.pdf
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Author(s)
Daulton, J. W.
Molnar, R. J.
Brinkerhoff, J. A.
Weir, T. J.
Hollis, M. A.
Zaslavsky, A.
Date Issued
February 6, 2024
Journal
Applied Physics Letters
Publisher
AIP Publishing
Citation
J. W. Daulton, R. J. Molnar, J. A. Brinkerhoff, T. J. Weir, M. A. Hollis, A. Zaslavsky; Limiting role of dislocations in high-current AlGaN/GaN hot electron transistors. Appl. Phys. Lett. 5 February 2024; 124 (6): 063505.
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Final published version
Abstract
III-nitride-based hot electron transistors (HETs) hold significant promise as high-speed, high-power devices. In our previous work, we demonstrated high current density and common-emitter gain at room temperature. Here, we measure multiple devices at cryogenic temperatures, extending the Gummel characteristics past the onset of intervalley scattering at 77 K. We demonstrate a Gummel current gain of 4.7 at a collector current density of 2.6 MA/cm2 at 77 K as well as a peak current density exceeding 3 MA/cm2. From these data, we determine that dislocation-associated inhomogeneities play a limiting role in AlGaN/GaN HETs, controlling the current gain, density, knee voltage, and base-collector leakage. A comparison of two nominally identical devices suggests that even a modest reduction in dislocation density would result in a substantial improvement in HET performance.
MIT Department
Lincoln Laboratory
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DOI of Published Version
https://doi.org/10.1063/5.0193571
