T-junction resonant modulators and detectors in CMOS
Name
1014181810-MIT.pdf
Description
Full printable version
Size
2.3 MB
Format
Adobe PDF
Checksum (MD5)
825b46a4004ae302d76c7d31f2406fdf
Author(s)
Cheian, Dinis
Advisor(s)
Rajeev Ram.
Date Issued
2016
Publisher
Massachusetts Institute of Technology
Abstract
Design of optical modulators and detectors is investigated. A new design idea is proposed for optical modulators - T-junction. The T-junction allows to decouple the Extinction Ratio from the Bandwidth and to optimize each separately. Initial T-junction modulator provides an increase in bandwidth - 13 GHz versus 3 GHz, for the previous designs. An analytical model is created and is verified against the experimental data of the T-junctions. The model is then used to optimize the modulators and to achieve a design operating at above 35 GHz. The bandwidth increase with optical intensity is investigated in detectors. The unusual behavior is reproduced in Sentaurus. The severe depletion of the N and P regions is found to be responsible for the bandwidth variations. Increasing the doping of the P and N regions proves to successfully tackle the problem.
Description
Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2016.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 128-131).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission.
Persistent DSpace Link
