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  4. Multi‐level Electro‐thermal Switching of Optical Phase‐Change Materials Using Graphene

Multi‐level Electro‐thermal Switching of Optical Phase‐Change Materials Using Graphene

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sword-2022-03-16T15:51:12.original.xml (130 B)
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Author(s)
Ríos, Carlos
•
Zhang, Yifei
•
Shalaginov, Mikhail Y
•
Deckoff-Jones, Skylar
•
Wang, Haozhe
•
An, Sensong
•
Zhang, Hualiang
•
Kang, Myungkoo
•
Richardson, Kathleen A
•
Roberts, Christopher
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Date Issued
2021
Journal
Advanced Photonics Research
Publisher
Wiley
Citation
Ríos, Carlos, Zhang, Yifei, Shalaginov, Mikhail Y, Deckoff-Jones, Skylar, Wang, Haozhe et al. 2021. "Multi‐level Electro‐thermal Switching of Optical Phase‐Change Materials Using Graphene." Advanced Photonics Research, 2 (1).
Version
Final published version
Abstract
Reconfigurable photonic systems featuring minimal power consumption are crucial for integrated optical devices in real-world technology. Current active devices available in foundries, however, use volatile methods to modulate light, requiring a constant supply of power and significant form factors. Essential aspects to overcoming these issues are the development of nonvolatile optical reconfiguration techniques which are compatible with on-chip integration with different photonic platforms and do not disrupt their optical performances. In this paper, a solution is demonstrated using an optoelectronic framework for nonvolatile tunable photonics that employs undoped-graphene microheaters to thermally and reversibly switch the optical phase-change material Ge$_2$Sb$_2$Se$_4$Te$_1$ (GSST). An in-situ Raman spectroscopy method is utilized to demonstrate, in real-time, reversible switching between four different levels of crystallinity. Moreover, a 3D computational model is developed to precisely interpret the switching characteristics, and to quantify the impact of current saturation on power dissipation, thermal diffusion, and switching speed. This model is used to inform the design of nonvolatile active photonic devices; namely, broadband Si$_3$N$_4$ integrated photonic circuits with small form-factor modulators and reconfigurable metasurfaces displaying 2$\pi$ phase coverage through neural-network-designed GSST meta-atoms. This framework will enable scalable, low-loss nonvolatile applications across a diverse range of photonics platforms.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Lincoln Laboratory
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Creative Commons Attribution 4.0 International license
https://creativecommons.org/licenses/by/4.0/
Persistent DSpace Link
https://hdl.handle.net/1721.1/141218
DOI of Published Version
https://doi.org/10.1002/ADPR.202000034
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