Interplay between intrinsic defects, doping, and free carrier concentration in SrTiO[subscript 3] thin films
Name
Ertekin-2012-Interplay between intrinsic defects.pdf
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Author(s)
Ertekin, Elif
Srinivasan, Varadharajan
Ravichandran, Jayakanth
Rossen, Pim B.
Siemons, Wolter
Majumdar, Arun
Ramesh, Ramamoorthy
Grossman, Jeffrey C.
Date Issued
May 2012
Journal
Physical Review B
Publisher
American Physical Society
Citation
Ertekin, Elif et al. “Interplay Between Intrinsic Defects, Doping, and Free Carrier Concentration in SrTiO_{3} Thin Films.” Physical Review B 85.19 (2012). ©2012 American Physical Society
Version
Final published version
Abstract
Using both computational and experimental analysis, we demonstrate a rich point-defect phase diagram in doped strontium titanate as a function of thermodynamic variables such as oxygen partial pressure and electronic chemical potential. Computational modeling of point-defect energetics demonstrates that a complex interplay exists between dopants, thermodynamic parameters, and intrinsic defects in thin films of SrTiO[subscript 3] (STO). We synthesize STO thin films via pulsed laser deposition and explore this interplay between intrinsic defects, doping, compensation, and carrier concentration. Our point-defect analysis (i) demonstrates that careful control over growth conditions can result in the tunable presence of anion and cation vacancies, (ii) suggests that compensation mechanisms will pose intrinsic limits on the dopability of perovskites, and (iii) provides a guide for tailoring the properties of doped perovskite thin films.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1103/PhysRevB.85.195460
