Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration
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Enhancement of Thermoelectric Performance of n-type PbSe by Cr doping with Optimized Carrier Concentration.pdf
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Main article
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Author(s)
Zhang, Qian
Chere, Eyob Kebede
McEnaney, Kenneth
Yao, Mengliang
Cao, Feng
Ni, Yizhou
Chen, Shuo
Opeil, Cyril
Chen, Gang
Ren, Zhifeng
Date Issued
January 2015
Journal
Advanced Energy Materials
Publisher
Wiley Blackwell
Citation
Zhang, Qian, Eyob Kebede Chere, Kenneth McEnaney, Mengliang Yao, Feng Cao, Yizhou Ni, Shuo Chen, Cyril Opeil, Gang Chen, and Zhifeng Ren. “Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration.” Adv. Energy Mater. 5, no. 8 (January 7, 2015): n/a–n/a.
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Author's final manuscript
Abstract
Ti, V, Cr, Nb, and Mo are found to be effective at increasing the Seebeck coefficient and power factor of n-type PbSe at temperatures below 600 K. It is found that the higher Seebeck coefficients and power factors are due to higher Hall mobility ≈1000 cm[superscript 2] V[superscript −]1s[superscript −1] at lower carrier concentration. A larger average ZT value (relevant for applications) can be obtained by an optimization of carrier concentration to ≈10[superscript 18]–10[superscript 19] cm[superscript −3]. Even though the highest room temperature power factor ≈3.3 × 10[superscript −3] W m[superscript −1] K[superscript −2] is found in 1 at% Mo-doped PbSe, the highest ZT is achieved in Cr-doped PbSe. Combined with the lower thermal conductivity, ZT is improved to ≈0.4 at room temperature and peak ZTs of ≈1.0 are observed at ≈573 K for Pb[subscript 0.9925]Cr[subscript 0.0075]Se and ≈673 K for Pb[subscript 0.995]Cr[subscript 0.005]Se. The calculated device efficiency of Pb[subscript 0.995]Cr[subscript 0.005]Se is as high as ≈12.5% with cold side 300 K and hot side 873 K, higher than those of all the n-type PbSe materials reported in the literature.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
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DOI of Published Version
https://doi.org/10.1002/aenm.201401977
