Tuning, optimization, and perovskite solar cell device integration of ultrathin poly(3,4-ethylene dioxythiophene) films via a single-step all-dry process
Name
eaay0414.full.pdf
Description
Published version
Size
1.04 MB
Format
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Checksum (MD5)
fdf77cbac1c1c1c7f13b41bba55f4d01
Author(s)
Heydari Gharahcheshmeh, Meysam
Tavakoli, Mohammad Mahdi
Gleason, Edward
Robinson, Maxwell T.
Kong, Jing
Gleason, Karen K
Date Issued
November 2019
Journal
Science Advances
Publisher
American Association for the Advancement of Science (AAAS)
Citation
Heydari Gharahcheshmeh, Meysam et al. "Tuning, optimization, and perovskite solar cell device integration of ultrathin poly(3,4-ethylene dioxythiophene) films via a single-step all-dry process." Science Advances 5 (2019): easy 2014 © 2019 The Author(s)
Version
Final published version
Abstract
For semicrystalline poly(3,4-ethylene dioxythiophene) (PEDOT), oxidative chemical vapor deposition (oCVD)enables systematic control over theb-axis lattice parameter ([pi]-[pi]-pstacking distance). Decreasing theb-axis latticeparameter increases the charge transfer integral, thus enhancing intracrystallite mobility. To reduce the barrierto intercrystallite transport, oCVD conditions were tailored to produce pure face-on crystallite orientationrather than the more common edge-on orientation. The face-on oriented oCVD PEDOT with the lowestb-axislattice parameter displayed the highest in-plane electrical conductivity ([sigma][subscript dc] = 2800 S/cm), largest opticalbandgap (2.9 eV), and lowest degree of disorder as characterized by the Urbach band edge energy. Withthe single step oCVD process at growth conditions compatible with direct deposition onto flexible plasticsubstrates, the ratio [sigma][subscript dc]/[sigma][subscript op]reached 50. As compared to spun-cast PEDOT:polystyrene sulfonate, integrationof oCVD PEDOT as a hole transport layer (HTL) improved both the power conversion efficiency (PCE) andshelf-life stability of inverted perovskite solar cells (PSC)
MIT Department
Massachusetts Institute of Technology. Department of Chemical Engineering
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Creative Commons Attribution NonCommercial License 4.0
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DOI of Published Version
https://doi.org/10.1126/sciadv.aay0414
