High electrical conductivity and carrier mobility in oCVD PEDOT thin films by engineered crystallization and acid treatment
Name
eaat5780.full.pdf
Size
1.33 MB
Format
Adobe PDF
Checksum (MD5)
1c71fcad29e2a5d1cc8a261c54b96aa4
Author(s) • • • • • • • • •
Wang, Xiaoxue
Zhang, Xu
Sun, Lei
Lee, Dongwook
Lee, Sunghwan
Wang, Minghui
Zhao, Junjie
Shao-Horn, Yang
Dinca, Mircea
Palacios, Tomas
Date Issued
September 2018
Journal
Science Advances
Publisher
American Association for the Advancement of Science (AAAS)
Citation
Wang, Xiaoxue, Xu Zhang, Lei Sun, Dongwook Lee, Sunghwan Lee, Minghui Wang, Junjie Zhao, et al. “High Electrical Conductivity and Carrier Mobility in oCVD PEDOT Thin Films by Engineered Crystallization and Acid Treatment.” Science Advances 4, no. 9 (September 2018): eaat5780.
Version
Final published version
Abstract
Air-stable, lightweight, and electrically conductive polymers are highly desired as the electrodes for next-generation electronic devices. However, the low electrical conductivity and low carrier mobility of polymers are the key bottlenecks that limit their adoption.We demonstrate that the key to addressing these limitations is tomolecularly engineer the crystallization and morphology of polymers. We use oxidative chemical vapor deposition (oCVD) and hydrobromic acid treatment as an effective tool to achieve such engineering for conducting polymer poly(3,4-ethylenedioxythiophene) (PEDOT). We demonstrate PEDOT thin filmswith a record-high electrical conductivity of 6259 S/cm and a remarkably high carriermobility of 18.45 cm2V-1s-1by inducing a crystallite-configuration transition using oCVD. Subsequent theoretical modeling reveals a metallic nature and an effective reduction of the carrier transport energy barrier between crystallized domains in these thin films. To validate this metallic nature, we successfully fabricate PEDOT-Si Schottky diode arrays operating at 13.56MHzfor radio frequency identification (RFID) readers, demonstratingwafer-scale fabrication compatible with conventional complementary metal-oxide semiconductor (CMOS) technology. The oCVD PEDOT thin films with ultrahigh electrical conductivity and high carrier mobility show great promise for novel high-speed organic electronics with low energy consumption and better charge carrier transport.
MIT Department
Massachusetts Institute of Technology. Department of Chemical Engineering
Massachusetts Institute of Technology. Department of Chemistry
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Department of Mechanical Engineering
Terms of Use
Creative Commons Attribution-NonCommercial 4.0 International
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1126/sciadv.aat5780