Revisiting the “In-clustering” question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold
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Gradecak_Revisiting the in-clustering.pdf
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Author(s)
Baloch, Kamal H.
Johnston-Peck, Aaron C.
Kisslinger, Kim
Stach, Eric A.
Gradecak, Silvija
Date Issued
May 2013
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Baloch, Kamal H., Aaron C. Johnston-Peck, Kim Kisslinger, Eric A. Stach, and Silvija Gradečak. “Revisiting the ‘In-clustering’ question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold.” Applied Physics Letters 102, no. 19 (2013): 191910. © 2013 AIP Publishing LLC
Version
Final published version
Abstract
The high intensity of light emitted in In[subscript x]Ga[subscript 1−x]N/GaN heterostructures has been generally attributed to the formation of indium-rich clusters in In[subscript x]Ga[subscript 1−x]N quantum wells (QWs). However, there is significant disagreement about the existence of such clusters in as-grown In[subscript x]Ga[subscript 1−x]N QWs. We employ atomically resolved CS-corrected scanning transmission electron microscopy and electron energy loss spectroscopy at 120 kV—which we demonstrate to be below the knock-on displacement threshold—and show that indium clustering is not present in as-grown In[subscript 0.22]Ga[subscript 0.78]N QWs. This artifact-free, atomically resolved method can be employed for investigating compositional variations in other In[subscript x]Ga[subscript 1−x]N/GaN heterostructures.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Research Laboratory of Electronics
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1063/1.4807122
