Characterization of superconducting through-silicon vias as capacitive elements in quantum circuits
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154004_1_5.0170055.pdf
Description
Published version
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2.15 MB
Format
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Checksum (MD5)
121a3d5930236887fda8a94b27a52d6c
Author(s)
Hazard, TM
Woods, W
Rosenberg, D
Das, R
Hirjibehedin, CF
Kim, DK
Knecht, JM
Mallek, J
Melville, A
Niedzielski, BM
Date Issued
October 9, 2023
Journal
Applied Physics Letters
Publisher
AIP Publishing
Citation
T. M. Hazard, W. Woods, D. Rosenberg, R. Das, C. F. Hirjibehedin, D. K. Kim, J. M. Knecht, J. Mallek, A. Melville, B. M. Niedzielski, K. Serniak, K. M. Sliwa, D. R. W. Yost, J. L. Yoder, W. D. Oliver, M. E. Schwartz; Characterization of superconducting through-silicon vias as capacitive elements in quantum circuits. Appl. Phys. Lett. 9 October 2023; 123 (15): 154004.
Version
Final published version
Abstract
The large physical size of superconducting qubits and their associated on-chip control structures presents a practical challenge toward building a large-scale quantum computer. In particular, transmons require a high-quality-factor shunting capacitance that is typically achieved by using a large coplanar capacitor. Other components, such as superconducting microwave resonators used for qubit state readout, are typically constructed from coplanar waveguides, which are millimeters in length. Here, we use compact superconducting through-silicon vias to realize lumped-element capacitors in both qubits and readout resonators to significantly reduce the on-chip footprint of both of these circuit elements. We measure two types of devices to show that through-silicon vias are of sufficient quality to be used as capacitive circuit elements and provide a significant reduction in size over existing approaches.
MIT Department
Lincoln Laboratory
Massachusetts Institute of Technology. Research Laboratory of Electronics
Massachusetts Institute of Technology. Department of Physics
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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DOI of Published Version
https://doi.org/10.1063/5.0170055
