Nonlinear optical properties of integrated GeSbS chalcogenide waveguides
Name
prj-6-5-B37.pdf
Description
Published version
Size
1.6 MB
Format
Adobe PDF
Checksum (MD5)
2238ddedef5737b6775ac24272a25784
Author(s)
Serna, Samuel
Lin, Hongtao
Alonso-Ramos, Carlos
Yadav, Anupama
Le Roux, Xavier
Richardson, Kathleen
Cassan, Eric
Dubreuil, Nicolas
Hu, Juejun
Vivien, Laurent
Date Issued
2018
Journal
Photonics Research
Publisher
The Optical Society
Version
Final published version
Abstract
© 2018 Chinese Laser Press. In this paper, we report the experimental characterization of highly nonlinear GeSbS chalcogenide glass waveguides. We used a single-beam characterization protocol that accounts for the magnitude and sign of the real and imaginary parts of the third-order nonlinear susceptibility of integrated Ge23Sb7S70 (GeSbS) chalcogenide glass waveguides in the near-infrared wavelength range at λ = 1580 nm. We measured a waveguide nonlinear parameter of 7.0 ± 0.7 W−1 · m−1, which corresponds to a nonlinear refractive index of n2 = (0.93 ± 0.08) × 10−18 m2/W, comparable to that of silicon, but with an 80 times lower two-photon absorption coefficient βTPA= (0.010 ± 0.003) cm/GW, accompanied with linear propagation losses as low as 0.5 dB/cm. The outstanding linear and nonlinear properties of GeSbS, with a measured nonlinear figure of merit FOMTPA= 6.0 ± 1.4 at λ = 1580 nm, ultimately make it one of the most promising integrated platforms for the realization of nonlinear functionalities.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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DOI of Published Version
https://doi.org/10.1364/PRJ.6.000B37
