The Sliding-Aperture Transform and Its Applicability to Deep-Level Transient Spectroscopy
Name
applsci-12-05317-v2.pdf
Size
1 MB
Format
Adobe PDF
Checksum (MD5)
9883b4e7b93dd4b841f6398008dbef5e
Author(s)
Buchwald, Walter R.
Peale, Robert E.
Grant, Perry C.
Logan, Julie V.
Webster, Preston T.
Morath, Christian P.
Date Issued
May 24, 2022
Publisher
Multidisciplinary Digital Publishing Institute
Citation
Applied Sciences 12 (11): 5317 (2022)
Version
Final published version
Abstract
A mathematical method is presented for the extraction of defect parameters from the multiexponential decays generated during deep-level transient spectroscopy experiments. Such transient phenomenon results from the ionization of charge trapped in defects located in the depletion width of a semiconductor diode. From digitized transients acquired at fixed temperatures, this method produces a rate–domain spectral signature associated with all defects in the semiconductor. For signal-to-noise ratio of 1000, defect levels with carrier emission rates differing by as little as 1.5 times may be distinguished.
MIT Department
Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
Terms of Use
Creative Commons Attribution
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.3390/app12115317
