Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs
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Chung_Seamless-On-Wafer.pdf
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Author(s)
Piner, Edwin L.
Jae-kyu, Lee
Chung, Jinwook
Palacios, Tomas
Date Issued
August 2009
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers
Citation
Chung, J.W. et al. “Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs.” Electron Device Letters, IEEE 30.10 (2009): 1015-1017. © 2009 IEEE
Version
Final published version
Abstract
The first on-wafer integration of Si(100) MOSFETs and AlGaN/GaN high electron mobility transistors (HEMTs) is demonstrated. To enable a fully Si-compatible process, we fabricated a novel Si(100)-GaN-Si(100) virtual substrate through a wafer bonding and etch-back technique. The high thermal stability of nitride semiconductors allowed the fabrication of Si MOSFETs on this substrate without degrading the performance of the GaN epilayers. After the Si devices were fabricated, the nitride epilayer is exposed, and the nitride transistors are processed. By using this technology, GaN and Si devices separated by less than 5 mum from each other have been fabricated, which is suitable for building future heterogeneous integrated circuits.
Subjects
virtual substrate
metal–oxide–semiconductor field-effect transistor (MOSFET)
high electron mobility transistor (HEMT)
heterogeneous integration
Si(100)
GaN
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
http://dx.doi.org/10.1109/led.2009.2027914
