Calculating the band structure of 3C-SiC using sp[superscript 3]d[superscript 5]s* + ∆ model
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40094_2019_Article_324.pdf
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Author(s)
Onen, Murat
Turchetti, Marco
Date Issued
February 2019
Journal
Journal of Theoretical and Applied Physics
Publisher
Springer Berlin Heidelberg
Citation
Onen, Murat, and Marco Turchetti. “Calculating the Band Structure of [subscript 3]C-SiC Using Sp[superscript 3]d[superscript 5]s* + ∆ Model.” Journal of Theoretical and Applied Physics (February 28, 2019). © 2019 The Authors
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Final published version
Abstract
We report on a semiempirical tight-binding model for [subscript 3]C-SiC including the effect of sp[superscript 3]d[superscript 5]s* orbitals and spin–orbit coupling (∆). In this work, we illustrate in detail the method to develop such a model for semiconductors with zincblende structure, based on Slater–Koster integrals, and we explain the optimization method used to fit the experimental results with such a model. This method shows high accuracy for the evaluation of 3C-SiC band diagram in terms of both the experimental energy levels at high symmetry points and the effective masses.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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DOI of Published Version
https://doi.org/10.1007/s40094-019-0324-5
