Comparison of dielectric loss in titanium nitride and aluminum superconducting resonators
Name
5.0021950.pdf
Description
Published version
Size
1.14 MB
Format
Adobe PDF
Checksum (MD5)
d881c87b2d3ca3bba10295143f507913
Author(s)
Melville, A
Calusine, G
Woods, W
Serniak, K
Golden, E
Niedzielski, BM
Kim, DK
Sevi, A
Yoder, JL
Dauler, EA
Date Issued
2020
Journal
Applied Physics Letters
Publisher
AIP Publishing
Version
Final published version
Abstract
© 2020 Author(s). Lossy dielectrics are a significant source of decoherence in superconducting quantum circuits. In this report, we model and compare the dielectric loss in bulk and interfacial dielectrics in titanium nitride (TiN) and aluminum (Al) superconducting coplanar waveguide resonators. We fabricate isotropically trenched resonators to produce a series of device geometries that accentuate a specific dielectric region's contribution to the resonator quality factor. While each dielectric region contributes significantly to loss in TiN devices, the metal-air interface dominates the loss in the Al devices. Furthermore, we evaluate the quality factor of each TiN resonator geometry with and without a post-process hydrofluoric etch and find that it reduced losses from the substrate-air interface, thereby improving the quality factor.
MIT Department
Lincoln Laboratory
Massachusetts Institute of Technology. Research Laboratory of Electronics
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Creative Commons Attribution 4.0 International license
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1063/5.0021950
