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  4. Generation of nanosecond THz pulses using a high gain ring resonator with a semiconductor switch

Generation of nanosecond THz pulses using a high gain ring resonator with a semiconductor switch

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Author(s)
Genoud, J.
•
Claveau, E. L.
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Jawla, S. K.
•
Li, G.
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Picard, J. F.
•
Shapiro, M. A.
•
Temkin, R. J.
Date Issued
July 25, 2022
Publisher
AIP Publishing
Citation
Genoud, J., Claveau, E. L., Jawla, S. K., Li, G., Picard, J. F. et al. 2022. "Generation of nanosecond THz pulses using a high gain ring resonator with a semiconductor switch." 121 (4).
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Final published version
Abstract
A [Formula: see text] quasi-optical ring resonator consisting of an input coupler and three mirrors has been designed and tested. A low-loss silicon wafer in the ring provides output coupling of the stored power when irradiated by a pulse from a [Formula: see text] laser. The ring created [Formula: see text] output power pulses when excited by a [Formula: see text] continuously operating input source, achieving a power gain of 16. In a fully tuned ring, higher gain is achievable. If the ring was used with a pulsed input source having a pulse length of several times the fill time, the ring could be used as an efficient pulse compressor with similar high gain. The resonator has a wide range of applications, including, at low power, spectroscopy and, at high power, testing of accelerator structures and materials.
MIT Department
Massachusetts Institute of Technology. Department of Physics
Massachusetts Institute of Technology. Plasma Science and Fusion Center
Terms of Use
Creative Commons Attribution 4.0 International license
https://creativecommons.org/licenses/by/4.0/
Persistent DSpace Link
https://hdl.handle.net/1721.1/145516
DOI of Published Version
https://doi.org/10.1063/5.0098718
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