Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials
Author(s)
Nezich, Daniel
Park, Yong Ju
Sundaram, Suresh
Li, Xin
Yue, Ruoyu
Zhou, Guanyu
Ahn, Jong-Hyun
Ougazzaden, Abdallah
Shim, Jaewoo
Bae, Sanghoon
Date Issued
September 2018
Journal
Science
Publisher
American Association for the Advancement of Science (AAAS)
Citation
Shim, Jaewoo et al. “Controlled Crack Propagation for Atomic Precision Handling of Wafer-Scale Two-Dimensional Materials.” Science 362, 6415 (October 2018): 665–670 © 2018 The Authors
Version
Author's final manuscript
Abstract
No claim to original U.S. Government Works. Although flakes of two-dimensional (2D) heterostructures at the micrometer scale can be formed with adhesive-tape exfoliation methods, isolation of 2D flakes into monolayers is extremely time consuming because it is a trial-and-error process. Controlling the number of 2D layers through direct growth also presents difficulty because of the high nucleation barrier on 2D materials. We demonstrate a layer-resolved 2D material splitting technique that permits high-throughput production of multiple monolayers of wafer-scale (5-centimeter diameter) 2D materials by splitting single stacks of thick 2D materials grown on a single wafer. Wafer-scale uniformity of hexagonal boron nitride, tungsten disulfide, tungsten diselenide, molybdenum disulfide, and molybdenum diselenide monolayers was verified by photoluminescence response and by substantial retention of electronic conductivity. We fabricated wafer-scale van der Waals heterostructures, including field-effect transistors, with single-atom thickness resolution.
MIT Department
Lincoln Laboratory
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Department of Mechanical Engineering
Massachusetts Institute of Technology. Department of Physics
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Massachusetts Institute of Technology. Plasma Science and Fusion Center
Massachusetts Institute of Technology. Research Laboratory of Electronics
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1126/science.aat8126
