Environment-assisted Quantum-enhanced Sensing with Electronic Spins in Diamond
Name
PhysRevApplied.12.044047.pdf
Description
Published version
Size
662.2 KB
Format
Adobe PDF
Checksum (MD5)
5565cee392ffb91a5bff9235b89a542a
Author(s)
Cooper, Alexandre
Sun, Won Kyu Calvin
Jaskula, Jean-Christophe
Cappellaro, Paola
Date Issued
October 2019
Journal
Physical Review Applied
Publisher
American Physical Society (APS)
Citation
Cooper, Alexandre, et al. “Environment-Assisted Quantum-Enhanced Sensing with Electronic Spins in Diamond.” Physical Review Applied 12, 4 (October 2019): 044047. © 2019 American Physical Society.
Version
Final published version
Abstract
The performance of solid-state quantum sensors based on electronic spin defects is often limited by the presence of environmental spin impurities that cause decoherence. A promising approach to improve these quantum sensors is to convert environment spins into useful resources for sensing, in particular, entangled states. However, the sensitivity enhancement that can be achieved from entangled states is limited by experimental constraints, such as control errors, decoherence, and time overheads. Here we experimentally demonstrate the efficient use of an unknown electronic spin defect in the proximity of a nitrogen-vacancy center in diamond to achieve both an entangled quantum sensor and a quantum memory for readout. We show that, whereas entanglement alone does not provide an enhancement in sensitivity, combining both entanglement and repetitive readout achieves an enhancement in performance over the use of a single-spin sensor, and more broadly we discuss regimes where sensitivity could be enhanced. Our results critically highlight the challenges in improving quantum sensors using entangled states of electronic spins, while providing an important benchmark in the quest for entanglement-assisted metrology.
MIT Department
Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
Massachusetts Institute of Technology. Research Laboratory of Electronics
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1103/PHYSREVAPPLIED.12.044047
