On the relationship between carrier mobility and velocity in sub-50 mm MOSFETs via calibrated Monte Carlo simulation
Name
57402101-MIT.pdf
Description
Full printable version
Size
2.86 MB
Format
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Checksum (MD5)
01f51add17680225970b2002a91cb737
Author(s)
Nayfeh, Osama Munir, 1980-
Advisor(s)
Dimitri A. Antoniadis.
Date Issued
2004
Publisher
Massachusetts Institute of Technology
Abstract
Subsequent to accurate 2D inverse modeling in the regime sensitive to electrostatics of industrial sub-50 nm NMOSFETs, a 2D full-band Monte Carlo device simulator was calibrated in the regime sensitive to transport parameters. The relationship between electron mobility and high-electric-field velocity at the source-channel potential energy barrier was investigated. The results show a strong correlation, as was demonstrated previously experimentally. Moreover, further proof is provided that the velocity at which carriers are injected from the source region in modem NMOSFET's is only about half of the limiting thermal velocity.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, June 2004.
"May 2004."
Includes bibliographical references (leaves 38-39).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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