GaN Nanowire Field Emitters with a Self-Aligned Gate Process

Shih, Pao-Chuan; Rughoobur, Girish; Xiang, Peng; Liu, Kai; Cheng, Kai; Akinwande, Akintunde I.; Palacios, Tomas

doi:10.1109/DRC50226.2020.9135161

GaN Nanowire Field Emitters with a Self-Aligned Gate Process

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Author(s)

Shih, Pao-Chuan

•

Rughoobur, Girish

•

Xiang, Peng

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Liu, Kai

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Cheng, Kai

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Akinwande, Akintunde I.

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Palacios, Tomas

Date Issued

June 2020

Journal

2020 Device Research Conference (DRC)

Publisher

IEEE

Citation

Shih, Pao-Chuan, Rughoobur, Girish, Xiang, Peng, Liu, Kai, Cheng, Kai et al. 2020. "GaN Nanowire Field Emitters with a Self-Aligned Gate Process." 2020 Device Research Conference (DRC).

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MIT Department

Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science

Massachusetts Institute of Technology. Microsystems Technology Laboratories

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https://hdl.handle.net/1721.1/141927

DOI of Published Version

https://doi.org/10.1109/drc50226.2020.9135161