GaN Nanowire Field Emitters with a Self-Aligned Gate Process
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DRC_GaN Field Emitters with A Self-Aligned Gate Process_PC Shih.pdf
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302.14 KB
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Author(s) • • • • • •
Shih, Pao-Chuan
Rughoobur, Girish
Xiang, Peng
Liu, Kai
Cheng, Kai
Akinwande, Akintunde I.
Palacios, Tomas
Date Issued
June 2020
Journal
2020 Device Research Conference (DRC)
Publisher
IEEE
Citation
Shih, Pao-Chuan, Rughoobur, Girish, Xiang, Peng, Liu, Kai, Cheng, Kai et al. 2020. "GaN Nanowire Field Emitters with a Self-Aligned Gate Process." 2020 Device Research Conference (DRC).
Version
Author's final manuscript
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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Creative Commons Attribution-Noncommercial-Share Alike
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DOI of Published Version
https://doi.org/10.1109/drc50226.2020.9135161