Efficient wireless charging with gallium nitride FETs
Name
894495155-MIT.pdf
Description
Full printable version
Size
8.17 MB
Format
Adobe PDF
Checksum (MD5)
54f4e89a0e6f20b7915d3277124e519e
Author(s)
Yeh, Theresa (Theresa I.)
Advisor(s)
Anantha Chandrakasan and Tomás Palacios.
Alternative Title
Improving the efficiency of wireless charging for cellphones with gallium nitride FETs
Efficient wireless charging with gallium nitride field-effect transistors
Date Issued
2014
Publisher
Massachusetts Institute of Technology
Abstract
Though wireless charging is more convenient than traditional wired charging methods, it is currently less efficient. This not only wastes power but can also result in a longer charging time. Improving the efficiency of wireless charging systems is equivalent to reducing the sources of loss in the system. In this work, we focus on losses originating from the transistor. Resonant inductive wireless charging systems were designed and implemented for efficiency comparisons. We show in our experiments that replacing the traditional Silicon MOSFET with a Gallium Nitride FET can increase the overall system efficiency by 5%.
Description
Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014.
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 74-77).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
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