Multiscale modelling framework for the fracture of thin brittle polycrystalline films: application to polysilicon
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466_2014_Article_1083.pdf
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Author(s)
Vayrette, Renaud
Raskin, Jean-Pierre
Pardoen, Thomas
Galceran, Montserrat
Godet, Stéphane
Noels, Ludovic
Mulay, Shantanu S.
Becker, Gauthier
Date Issued
October 2014
Journal
Computational Mechanics
Publisher
Springer-Verlag
Citation
Mulay, Shantanu S., Gauthier Becker, Renaud Vayrette, et al. "Multiscale modelling framework for the fracture of thin brittle polycrystalline films: application to polysilicon." Computational Mechanics, vol. 55, no. 1, October 2014, pp. 73-91.
Version
Author's final manuscript
Abstract
Micro-electro-mechanical systems (MEMS) made of polycrystalline silicon are widely used in several engineering fields. The fracture properties of polycrystalline silicon directly affect their reliability. The effect of the orientation of grains on the fracture behaviour of polycrystalline silicon is investigated out of the several factors. This is achieved, firstly, by identifying the statistical variation of the fracture strength and critical strain energy release rate, at the nanoscopic scale, over a thin freestanding polycrystalline silicon film having mesoscopic scale dimensions. The fracture stress and strain at the mesoscopic level are found to be closely matching with uniaxial tension experimental results. Secondly, the polycrystalline silicon film is considered at the continuum MEMS scale, and its fracture behaviour is studied by incorporating the nanoscopic scale effect of grain orientation. The entire modelling and simulation of the thin film is achieved by combining the discontinuous Galerkin method and extrinsic cohesive law describing the fracture process.
MIT Department
Massachusetts Institute of Technology. Department of Aeronautics and Astronautics
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1007/s00466-014-1083-4
