Noise Contribution to Switching Current Distributions in NbN Nanowires
Name
1811.01891.pdf
Description
Accepted version
Size
1.38 MB
Format
Unknown
Checksum (MD5)
323f8594bd3973c337e9e39ea5cfbf33
Author(s)
Qu, Ashley
Zhu, Di
Berggren, Karl K
Date Issued
2019
Journal
ISEC 2019 - International Superconductive Electronics Conference
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Qu, Ashley, Zhu, Di and Berggren, Karl K. 2019. "Noise Contribution to Switching Current Distributions in NbN Nanowires." ISEC 2019 - International Superconductive Electronics Conference.
Version
Author's final manuscript
Abstract
© 2019 IEEE. The working mechanism behind superconducting nanowire-based devices is the electrothermal transition from the superconducting to normal state, at which the point is known as the switching current. Due to the stochastic nature of nanowires from thermal fluctuations, quantum fluctuations, electrical noise, and black-body radiation, superconducting nanowire-based devices suffer from low repeatability in measurements. Here, we use a tapered and non-tapered NbN nanowire to identify and quantify the effects of ramp rate on the switching current distribution at 1 K. We also plan to expand the model presented by McCaughan et al that includes the noise of the measurement system.
MIT Department
Massachusetts Institute of Technology. Research Laboratory of Electronics
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/ISEC46533.2019.8990925
