Fluorinated benzalkylsilane molecular rectifiers
Name
Fluorinated benzalkylsilane.pdf
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661.3 KB
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Checksum (MD5)
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Author(s)
Lamport, Zachary A.
Broadnax, Angela D.
Harrison, David
Barth, Katrina J.
Mendenhall, Lee
Hamilton, Clayton T.
Guthold, Martin
Thonhauser, Timo
Welker, Mark E.
Jurchescu, Oana D.
Date Issued
November 2016
Journal
Scientific Reports
Publisher
Nature Publishing Group
Citation
Lamport, Zachary A. et al. “Fluorinated Benzalkylsilane Molecular Rectifiers.” Scientific Reports 6.1 (2016): n. pag.
Version
Final published version
Abstract
We report on the synthesis and electrical properties of nine new alkylated silane self-assembled monolayers (SAMs) – (EtO)3Si(CH2)nN = CHPhX where n = 3 or 11 and X = 4-CF[subscript 3], 3,5-CF[subscript 3], 3-F-4-CF[subscript 3], 4-F, or 2,3,4,5,6-F, and explore their rectification behavior in relation to their molecular structure. The electrical properties of the films were examined in a metal/insulator/metal configuration, with a highly-doped silicon bottom contact and a eutectic gallium-indium liquid metal (EGaIn) top contact. The junctions exhibit high yields (>90%), a remarkable resistance to bias stress, and current rectification ratios (R) between 20 and 200 depending on the structure, degree of order, and internal dipole of each molecule. We found that the rectification ratio correlates positively with the strength of the molecular dipole moment and it is reduced with increasing molecular length.
MIT Department
Massachusetts Institute of Technology. Department of Chemistry
Terms of Use
Creative Commons Attribution 4.0 International License
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DOI of Published Version
https://doi.org/10.1038/srep38092
