Continuous quantitative monitoring of cerebral oxygen metabolism in neonates by ventilator-gated analysis of NIRS recordings
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Verghese_Continuous quantitative.pdf
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Author(s)
Heldt, Thomas
Kashif, Faisal Mahmood
Verghese, George C.
Sulemanji, Mustafa
O'Leary, Heather M.
Plessis, Adré J. du
Date Issued
February 2012
Journal
Intracranial Pressure and Brain Monitoring XIV
Publisher
Springer-Verlag
Citation
Heldt, Thomas et al. “Continuous Quantitative Monitoring of Cerebral Oxygen Metabolism in Neonates by Ventilator-Gated Analysis of NIRS Recordings.” Intracranial Pressure and Brain Monitoring XIV. Ed. Martin U. Schuhmann & Marek Czosnyka. Vol. 114. Vienna: Springer Vienna, 2012. 177–180.
Version
Author's final manuscript
Abstract
Oxidative stress during fetal development, delivery, or early postnatal life is a major cause of neuropathology, as both hypoxic and hyperoxic insults can significantly damage the developing brain. Despite the obvious need for reliable cerebral oxygenation monitoring, no technology currently exists to monitor cerebral oxygen metabolism continuously and noninvasively in infants at high risk for developing brain injury. Consequently, a rational approach to titrating oxygen supply to cerebral oxygen demand – and thus avoiding hyperoxic or hypoxic insults – is currently lacking. We present a promising method to close this crucial technology gap in the important case of neonates on conventional ventilators. By using cerebral near-infrared spectroscopy and signals from conventional ventilators, along with arterial oxygen saturation, we derive continuous (breath-by-breath) estimates of cerebral venous oxygen saturation, cerebral oxygen extraction fraction, cerebral blood flow, and cerebral metabolic rate of oxygen. The resultant estimates compare very favorably to previously reported data obtained by non-continuous and invasive means from preterm infants in neonatal critical care.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Research Laboratory of Electronics
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DOI of Published Version
https://doi.org/10.1007/978-3-7091-0956-4_34
