The design of a high efficiency RF power amplifier for an MCM process
Name
62324434-MIT.pdf
Description
Full printable version
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522.68 KB
Format
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Checksum (MD5)
bb821c3e8bdc4e074cdd123fe603a312
Author(s)
Noonan, James (James Keating)
Advisor(s)
Doug White and Joel Dawson.
Date Issued
2005
Publisher
Massachusetts Institute of Technology
Abstract
In this thesis, I addressed issues arising in the design of a high efficiency RF power amplifier for the Draper Laboratory multi-chip module (MCM) process. A design for a 2.3 GHz PCB amplifier using an enhancement-mode pHEMT device that achieves 68.9% PAE at 30 dBm output power is presented. Analysis of heat management, die connection parasitics, and transmission line structures in the context of the MCM process is performed to show that a similar design could realistically be adapted to the MCM process with possible performance enhancement.
Description
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2005.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Includes bibliographical references (p. 91-92).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
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