Thermoelectric properties of nanoporous Ge
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Grossman_Thermoelectric properties.pdf
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547.39 KB
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Author(s)
Lee, Joo-Hyoung
Grossman, Jeffrey C.
Date Issued
July 2009
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Lee, Joo-Hyoung, and Jeffrey C. Grossman. “Thermoelectric properties of nanoporous Ge.” Applied Physics Letters 95, no. 1 (2009): 013106. © 2009 American Institute of Physics
Version
Final published version
Abstract
We computed thermoelectric properties of nanoporous Ge (np-Ge) with aligned pores along the [001] direction through a combined classical molecular dynamics and first-principles electronic structure approach. A significant reduction in the lattice thermal conductivity of np-Ge leads to a 30-fold increase in the thermoelectric figure-of-merit (ZT) compared to that of bulk. Detailed comparisons with the recently proposed np-Si show that although the maximum ZT (ZT[subscript max]) of Ge is nine times larger than that of Si in the bulk phase, ZT[subscript max] of np-Ge is twice as large as that of np-Si due to the similarity in lattice thermal conductivity of the two np systems. Moreover, ZT[subscript max] is found to occur at a carrier concentration two orders of magnitude lower than that for with np-Si due to the dissimilarities in their electronic structure.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1063/1.3159813
