Does p-type ohmic contact exist in WSe[subscript 2]–metal interfaces?
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Li_Does p-type ohmic.pdf
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Author(s)
Yang, Ruo Xi
Quhe, Ruge
Zhong, Hongxia
Cong, Linxiao
Ye, Meng
Ni, Zeyuan
Song, Zhigang
Yang, Jinbo
Shi, Junjie
Lu, Jing
Alternative Title
Does p-type ohmic contact exist in WSe2–metal interfaces?
Date Issued
November 2015
Journal
Nanoscale
Publisher
Royal Society of Chemistry
Citation
Wang, Yangyang et al. “Does P-Type Ohmic Contact Exist in WSe 2 ?metal Interfaces?” Nanoscale 8.2 (2016): 1179–1191.
Version
Original manuscript
Abstract
Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of two dimensional WSe[subscript 2] devices. We present the first comparative study of the interfacial properties between monolayer/bilayer (ML/BL) WSe[subscript 2] and Sc, Al, Ag, Au, Pd, and Pt contacts by using ab initio energy band calculations with inclusion of the spin–orbital coupling (SOC) effects and quantum transport simulations. The interlayer coupling tends to reduce both the electron and hole Schottky barrier heights (SBHs) and alters the polarity for the WSe[subscript 2]–Au contact, while the SOC chiefly reduces the hole SBH. In the absence of the SOC, the Pd contact has the smallest hole SBH. Dramatically, the Pt contact surpasses the Pd contact and becomes the p-type ohmic or quasi-ohmic contact with inclusion of the SOC. Therefore, p-type ohmic or quasi-ohmic contact exists in WSe[subscript 2]–metal interfaces. Our study provides a theoretical foundation for the selection of favorable metal electrodes in ML/BL WSe[subscript 2] devices.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
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DOI of Published Version
https://doi.org/10.1039/c5nr06204g
