Impurity diffusion in ion implanted AlN layers on sapphire substrates by thermal annealing
Name
Okumura_2022_Jpn._J._Appl._Phys._61_026501.pdf
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Published version
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785.87 KB
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Checksum (MD5)
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Author(s)
Okumura, Hironori
Watanabe, Yasuhiro
Shibata, Tomohiko
Yoshizawa, Kohei
Uedono, Akira
Tokunaga, Hiroki
Koseki, Shuuichi
Arimura, Tadanobu
Suihkonen, Sami
Palacios, Tomás
Date Issued
2022
Journal
Japanese Journal of Applied Physics
Publisher
IOP Publishing
Citation
Okumura, Hironori, Watanabe, Yasuhiro, Shibata, Tomohiko, Yoshizawa, Kohei, Uedono, Akira et al. 2022. "Impurity diffusion in ion implanted AlN layers on sapphire substrates by thermal annealing." Japanese Journal of Applied Physics, 61 (2).
Version
Final published version
Abstract
Abstract
We report on impurity diffusion in ion implanted AlN layers after thermal annealing. Silicon, tin, germanium, and magnesium ions were implanted into single-crystal Al-polar AlN layers grown on sapphire substrates. By annealing at 1600 °C, silicon and magnesium atoms were diffused in the AlN layer, while less change was observed in the distribution of germanium atoms. Silicon implantation introduced vacancy-related defects. By annealing at temperatures over 1300 °C, the vacancy-related defects were reduced, while oxygen atoms were diffused from the substrate due to sapphire decomposition. We reproducibly achieved silicon-implanted AlN layers with electrical conductance by controlling the annealing temperature and distribution of silicon and oxygen concentrations.
We report on impurity diffusion in ion implanted AlN layers after thermal annealing. Silicon, tin, germanium, and magnesium ions were implanted into single-crystal Al-polar AlN layers grown on sapphire substrates. By annealing at 1600 °C, silicon and magnesium atoms were diffused in the AlN layer, while less change was observed in the distribution of germanium atoms. Silicon implantation introduced vacancy-related defects. By annealing at temperatures over 1300 °C, the vacancy-related defects were reduced, while oxygen atoms were diffused from the substrate due to sapphire decomposition. We reproducibly achieved silicon-implanted AlN layers with electrical conductance by controlling the annealing temperature and distribution of silicon and oxygen concentrations.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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DOI of Published Version
https://doi.org/10.35848/1347-4065/AC47AA
