Direct observation of spin-polarized surface states in the parent compound of a topological insulator using spin- and angle-resolved photoemission spectroscopy in a Mott-polarimetry mode
Name
Hsieh-2010-Direct observation of spin-polarized surface states in the parent compound of a topological insulator using spin- and angle-resolved photoemission spectroscopy in a Mott-polarimetry mode.pdf
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1.63 MB
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Checksum (MD5)
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Author(s)
Hsieh, David
Wray, L.
Qian, D.
Xia, Y.
Dil, J. H.
Meier, F.
Patthey, L.
Osterwalder, J.
Bihlmayer, G.
Hor, Y. S.
Date Issued
December 2010
Journal
New Journal of Physics
Publisher
Institute of Physics Publishing
Citation
Hsieh, D et al. “Direct Observation of Spin-polarized Surface States in the Parent Compound of a Topological Insulator Using Spin- and Angle-resolved Photoemission Spectroscopy in a Mott-polarimetry Mode.” New Journal of Physics 12.12 (2010): 125001. Web.
Version
Final published version
Abstract
We report high-resolution spin-resolved photoemission spectroscopy (spin-ARPES) measurements on the parent compound Sb of the recently discovered three-dimensional topological insulator Bi1−xSbx (Hsieh et al 2008 Nature 452 970, Hsieh et al 2009 Science 323 919). By modulating the incident photon energy, we are able to map both the bulk and the (111) surface band structure, from which we directly demonstrate that the surface bands are spin polarized by the spin–orbit interaction and connect the bulk valence and conduction bands in a topologically non-trivial way. A unique asymmetric Dirac surface state gives rise to a k-splitting of its spin-polarized electronic channels. These results complement our previously published works on this class of materials and re-confirm our discovery of topological insulator states in the Bi₁₋ₓSbₓ series.
MIT Department
Massachusetts Institute of Technology. Department of Physics
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Creative Commons Attribution 3.0
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DOI of Published Version
https://doi.org/10.1088/1367-2630/12/12/125001
