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  4. Direct Evidence for Effects of Grain Structure on Reversible Compressive Deposition Stresses in Polycrystalline Gold Films

Direct Evidence for Effects of Grain Structure on Reversible Compressive Deposition Stresses in Polycrystalline Gold Films

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Author(s)
Monig, R.
•
Leib, J.
•
Thompson, Carl Vernette
Date Issued
June 2009
Journal
Physical Review Letters
Publisher
American Physical Society
Citation
Leib, J. , R. Mönig, and C. V. Thompson. “Direct Evidence for Effects of Grain Structure on Reversible Compressive Deposition Stresses in Polycrystalline Gold Films.” Physical Review Letters 102.25 (2009): 256101. © 2009 The American Physical Society.
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Final published version
Abstract
A component of the compressive stress that develops during deposition of polycrystalline thin films reversibly changes during interruptions of growth. The mechanism responsible for this phenomenon has been the subject of much recent speculation and experimental work. In this Letter, we have varied the in-plane grain size of columnar polycrystalline gold films with a fixed thickness, by varying their thermal history. Without a vacuum break, the stress in these films was then measured in situ during growth and during interruptions in growth. Homoepitaxial gold films were similarly characterized as part of this study. The inverse of the in-plane grain size and the corresponding reversible stress change were found to be proportional, with zero reversible stress change observed for infinite grain size (homoepitaxial films). These results demonstrate a clear role of grain size in the reversible changes in gold films.
MIT Department
Massachusetts Institute of Technology. Materials Processing Center
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
http://hdl.handle.net/1721.1/51775
DOI of Published Version
http://dx.doi.org/10.1103/PhysRevLett.102.256101
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