Strained-Si1-xGex/Si Band-to-Band Tunneling Transistors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switching Behavior
Name
Nayfeh-2009-Strained-Si1-xGex band-to-band tunneling transistors Impact of tunnel-junction germanium composition and doping concentration on switching behavior.pdf
Size
1.03 MB
Format
Adobe PDF
Checksum (MD5)
1b5f8517e2f2496992bdcb25f6eb9436
Author(s)
Nayfeh, Osama M.
Hoyt, Judy L.
Antoniadis, Dimitri A.
Alternative Title
Strained-Si [subscript 1-x]Ge [subscript x/Si Band-to-Band Tunneling Transistors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switching Behavior
Date Issued
October 2009
Journal
IEEE Transactions on Electron Devices
Publisher
Institute of Electrical and Electronics Engineers
Citation
Nayfeh, O.M., J.L. Hoyt, and D.A. Antoniadis. “Strained- Si{1 - x}Ge{x}/Si Band-to-Band Tunneling Transistors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switching Behavior.” Electron Devices, IEEE Transactions on 56.10 (2009): 2264-2269. © 2009, IEEE
Version
Final published version
Abstract
Strained pseudomorphic Si/Si [subscript 1-x]Ge [subscript x]/Si gate-controlled band-to-band tunneling (BTBT) devices have been analyzed with varying Ge composition up to 57% and p+ tunnel-junction (source) doping concentration in the 10 [superscript 19] -10 [superscript 20 cm [superscript -3] range. Measurements show the impact of these parameters on the transfer and output characteristics. Measurements are compared to simulations using a nonlocal BTBT model to analyze the mechanisms of device operation and to understand the impact of these parameters on the device switching behavior. The measured characteristics are consistent with simulation analysis that shows a reduction in energy barrier for tunneling (E [subscript geff]) and a reduction in tunneling distance with increasing Ge composition and source doping concentration. Increases in the pseudomorphic layer Ge content and doping concentration of the tunnel junction produce large improvements in the measured switching-behavior characteristics (I [subscript on], slope, turn-on voltages, and sharpness of turn-on as a function of V [subscript ds]). Simulations are also performed to project the potential performance of more optimized structures that may be suitable for extremely low power applications (V [subscript dd] < 0.4 V).
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/ted.2009.2028055
