Advanced silicon photonic modulators
Name
710993424-MIT.pdf
Description
Full printable version
Size
16.94 MB
Format
Adobe PDF
Checksum (MD5)
da39a4a0741733436dfff1c3ca9bf5c8
Author(s)
Sorace, Cheryl M
Advisor(s)
Franz X. Kärtner.
Date Issued
2010
Publisher
Massachusetts Institute of Technology
Abstract
Various electrical and optical schemes used in Mach-Zehnder (MZ) silicon plasma dispersion effect modulators are explored. A rib waveguide reverse biased silicon diode modulator is designed, tested and found to operate at speeds up to 13 GHz with a V"L of 1.2 Vcm. MOS capacitor modulator designs are investigated as an alternative, but are not found to offer significant advantages. Modulators are also designed for fabrication in an actual CMOS process -a crucial step in the quest for low-cost integration with modern electronic devices. Photonic crystal structures, which promise smaller footprint sizes and lower power requirements, are also investigated, but it proves difficult to obtain a physically feasible design. Finally, a linearization scheme for Mach-Zehnder modulators is proposed to significantly improve signal fidelity in analog applications. Simulations are used to demonstrate the effectiveness of this scheme for reverse biased silicon diode modulators.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010.
Cataloged from PDF version of thesis.
Includes bibliographical references (p. 120-123).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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