Room-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulator
Name
PhysRevLett.119.077702.pdf
Size
1.16 MB
Format
Adobe PDF
Checksum (MD5)
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Author(s)
Richardella, A.
Samarth, N.
Han, Jiahao
Siddiqui, Saima Afroz
Finley, Joseph Tyler
Liu, Luqiao
Date Issued
August 2017
Journal
Physical Review Letters
Publisher
American Physical Society
Citation
Han, Jiahao et al. "Room-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulator." Physical Review Letters 119, 7 (August 2017): 077702 © 2017 American Physical Society
Version
Final published version
Abstract
The strongly spin-momentum coupled electronic states in topological insulators (TI) have been extensively pursued to realize efficient magnetic switching. However, previous studies show a large discrepancy of the charge-spin conversion efficiency. Moreover, current-induced magnetic switching with TI can only be observed at cryogenic temperatures. We report spin-orbit torque switching in a TI-ferrimagnet heterostructure with perpendicular magnetic anisotropy at room temperature. The obtained effective spin Hall angle of TI is substantially larger than the previously studied heavy metals. Our results demonstrate robust charge-spin conversion in TI and provide a direct avenue towards applicable TI-based spintronic devices.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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DOI of Published Version
https://doi.org/10.1103/PhysRevLett.119.077702
