Optical gain from the direct gap transition of Ge-on-Si at room temperature
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Liu-2009-Optical gain from the direct gap transition of Ge-on-Si at room temperature.pdf
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Author(s)
Liu, Jifeng
Sun, Xiaochen
Kimerling, Lionel C.
Michel, Jurgen
Date Issued
September 2009
Citation
Jifeng Liu et al. “Optical gain from the direct gap transition of Ge-on-Si at room temperature.” Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on. 2009. 262-264. © Copyright 2010 IEEE
Version
Final published version
Abstract
We report direct band gap optical gain of tensile strained n+ epitaxial Ge-on-Si at room temperature, which confirms that band-engineered Ge-on-Si is a promising gain medium for monolithic optical amplifiers and lasers on Si.
MIT Department
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Microphotonics Center
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/GROUP4.2009.5338364
